Product Summary
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Features
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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IRF3710 |
International Rectifier |
MOSFET N-CH 100V 57A TO-220AB |
Data Sheet |
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IRF3710L |
MOSFET N-CH 100V 57A TO-262 |
Data Sheet |
Negotiable |
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IRF3710LPBF |
International Rectifier |
MOSFET MOSFT 100V 57A 23mOhm 86.7nC |
Data Sheet |
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IRF3710PBF |
International Rectifier |
MOSFET MOSFT 100V 57A 23mOhm 86.7nC |
Data Sheet |
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IRF3710S |
International Rectifier |
MOSFET N-CH 100V 57A D2PAK |
Data Sheet |
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IRF3710S/L |
Other |
Data Sheet |
Negotiable |
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IRF3710STRLPBF |
International Rectifier |
MOSFET MOSFT 100V 57A 23mOhm 86.7nC |
Data Sheet |
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IRF3710ZGPBF |
International Rectifier |
MOSFET |
Data Sheet |
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