Product Summary
High speed switching· Voltage drive· Low inductance module structure
Applications
Parametrics
· Inverter for Motor drive· AC and DC Servo drive amplifier· Uninterruptible power supply· Industrial machines, such as Welding machines
Absolute maximum ratings (at Tc=25°C unless otherwise specified)Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC pulse PC Tj Tstg Viso Conditions
Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2
*1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting or M6), Terminals to 4.5N·m(M6)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(j) toff tf VF (terminal) VF (chip) rr R lead Conditions VGE=0V, f=1MHz VCC Tj=25°C Tj=125°C Characteristics Min. Typ. Unit Max. nA V
Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. Unit Max. 0.12 °C/W
Features
IGBT Module U-Series
Diagrams
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![]() 2MBI300U2B-060 |
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![]() 2MBI100N-060-03 |
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![]() 2MBI100NB-120 |
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![]() 2MBI100NC-120 |
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![]() 2MBI100NE-120 |
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![]() 2MBI100P-140 |
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![]() 2MBI100PC-140 |
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