Product Summary
Half-bridge· Including fast free-wheeling diodes· Package with insulated metal base plate· RG on,min = 22 Ohm Type BSM 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE 20 k Gate-emitter voltage DC collector current 80 °C Pulsed collector current, 80 °C Power dissipation per IGBT 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, = 1min. Creepage distance Clearance DIN humidity category, DIN 40 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis Ptot F sec Vac mm K/W °C ICpuls 150 W VGE 110 75 Symbol VCE VCGR 20 A Values 1700 Unit V VCE IC Package HALF-BRIDGE 1 Ordering Code 1700V 110A
Parametrics
Electrical Characteristics, = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage VGE = VCE, 5 mA Collector-emitter saturation voltage VGE 25 °C VGE 125 °C Zero gate voltage collector current VCE 1700 V, VGE 25 °C VCE 1700 V, VGE 125 °C Gate-emitter leakage current VGE 20 V, VCE V AC Characteristics Transconductance VCE 75 A Input capacitance VCE 25 V, VGE = 1 MHz Output capacitance VCE 25 V, VGE = 1 MHz Reverse transfer capacitance VCE 25 V, VGE = 1 MHz Crss 0.28 Coss 1 Ciss 11 gfs nF S IGES 400 ICES 0.75 nA VCE(sat) mA VGE(th) 6.2 V Values typ. max. Unit
Electrical Characteristics, = 25 °C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load 125 °C Turn-on delay time VCC 1200 V, VGE 75 A RGon = 22 Rise time VCC 1200 V, VGE 75 A RGon = 22 Turn-off delay time VCC 1200 V, VGE 75 A RGoff = 22 Fall time VCC 1200 V, VGE 75 A RGoff = 22 Free-Wheel Diode forward voltage 75 A, VGE 75 A, VGE 125 °C Reverse recovery time -1200 V, VGE 0 V diF/dt = -800 A/μs, 125 °C Reverse recovery charge -1200 V, VGE 0 V diF/dt = -800 A/μs 7 21 Qrr 0.3 μC trr 650 1000 td(off) 400 800 td(on) ns Values typ. max. Unit
Features
IGBT Power Module
Diagrams
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