CM100DU-24H

CM100DU-24H IGBTs (Insulated Gate Bipolar Transistors) => IGBT Modules

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Price:: US $47.00~50.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
1 ~ 20 :	50.00 / Piece
21 ~ 30 :	48.00 / Piece
31 ~ 40 :	47.00 / Piece

PartNumber:: CM100DU-24H

Brand:: MITSUBISHI - MITSUBISHI | D/C: 03+

Availability:: Supply Ability: 1/Day Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-01-08

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Part Number:CM100DU-24H
US $47.00 - 50.00
Quantity:

piece

Product Summary

Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. a 1200V (VCES), 100 Ampere Dual IGBT Module.

Parametrics

Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 10mA, VCE = 100A, VGE = 100A, VGE = 125°C Total Gate Charge Emitter-Collector Voltage** VCC = 100A, VGE = 100A, VGE = 0V Min. Typ. Max. Units mA μA Volts nC Volts

**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Dynamic Electrical Characteristics, 25 °C unless otherwise specified

Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 3.1, Resistive Load Switching Operation = 100A, diE/dt = 100A, diE/dt = -200A/μs VCE = 10V, VGE = 0V Test Conditions Min. Typ. Max. Units ns μC