CM1200DB-34N

Product Summary

3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE

q IC................................................................ 1200A q VCES....................................................... 3300V q High Insulated Type in a Pack q AISiC Baseplate

APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Parametrics

Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso Qpd tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Partial discharge Maximum short circuit pulse width VGE = 25°C VCE = 90°C Pulse = 25°C, IGBT part Conditions Ratings Unit pC μs

Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Conditions VCE = VCES, VGE = 120mA, VCE = 25°C VGE = VGES, VCE = 1200A, VGE = 1200A, VGE = 125°C VCE = 100kHz VGE = 25°C VCC = 1200A, VGE = 1200A, VGE = 25°C (Note = 1200A, VGE = 125°C (Note 4) VCC = 1200A, VGE = ±15V RG(on) = 100nH Inductive load VCC = 1200A, VGE = ±15V RG(off) = 100nH Inductive load VCC = 1200A, VGE = ±15V RG(on) = 100nH Inductive load (Note 4) (Note 4) Min 5.0 Limits Typ Max Unit V μs J/pulse μs J/pulse μs μC J/pulse

V EC(Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2)

Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy

Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150°C). Pulse width and repetition rate should be such as to cause negligible temperature rise.

Features

HIGH POWER SWITCHING USE INSULATED TYPE

 

Diagrams