Product Summary

nverters, Converters, DC choppers, Induction heating, DC to DC converters

  ation nge. pecific to cha final s subject re is nic limits Th tr Notice parame Som
APPLICATION Inverters, Converters, DC choppers, Induction heating, to DC converters.
HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb.1999
. ation nge. pecific to cha final s subject re is nic limits Th tr Notice parame Som
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Parametrics

Symbol VCES VGES IC ICM I E (Note 1) I EM(Note P C (Note Tj T stg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight Conditions G-E Short C-E Short = 25°C Pulse = 25°C Pulse = 25°C Main terminal to Bass, AC for 1 minute Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value Ratings Unit °C V N·m kg

Symbol ICES Parameter Test conditions VCE = VCES, VGE = 120mA, VCE = 10V VGE = VGES, VCE 125 °C VCE = 10V VGE = 0V VCC = 1200A, VGE = 15V VCC = 1.6 Resistive load switching operation = 1200A, VGE = 1200A, die / μs IGBT part FWDi part Case to fin, conductive grease applied Min 4.5 Limits Typ Max Unit μs μC °C/W

Collector cutoff current Gate-emitter VGE(th) threshold voltage IGES Gate-leakage current Collector-emitter VCE(sat) saturation voltage Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 1) Emitter-collector voltage t rr (Note 1) Reverse recovery time Q rr (Note 1) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance

IE, VEC, rr , Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed T jmax rating. Junction temperature (Tj) should not increase beyond 150° C. Pulse width and repetition rate should be such as to cause negligible temperature rise.

Features

HIGH POWER SWITCHING USE INSULATED TYPE

 

Diagrams

 

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
CM1200HB-50H
CM1200HB-50H

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
CM1200DB-34N
CM1200DB-34N

Other


Data Sheet

Negotiable 
CM1200DC-34N
CM1200DC-34N

Other


Data Sheet

Negotiable 
CM1200E4C-34N
CM1200E4C-34N

Other


Data Sheet

Negotiable 
CM1200HA-24J
CM1200HA-24J


IGBT MOD SGL 1200V 1200A H SER

Data Sheet

Negotiable 
CM1200HA-34H
CM1200HA-34H

Other


Data Sheet

Negotiable 
CM1200HA-50H
CM1200HA-50H

Other


Data Sheet

Negotiable