Product Summary
IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking
Parametrics
Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. a 1200V (VCES), 400 Ampere Dual IGBTMODTM Power Module.
Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VCES, VCE = 40mA, VCE = 400A, VGE = 400A, VGE = 125°C Total Gate Charge Emitter-Collector Voltage** VCC = 400A, VGE = 400A, VGE = 0V Min. Typ. Max. Units mA μA Volts nC Volts
Features
HIGH POWER SWITCHING USE
Diagrams
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CM400DU-24F |
IGBT MOD DUAL 1200V 400A F SER |
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CM400DU-12F |
IGBT MOD DUAL 600V 400A F SER |
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CM400DU-12H |
IGBT MOD DUAL 600V 400A U SER |
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CM400DU-12NFH |
IGBT MOD DUAL 600V 400A NFH SER |
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CM400DU-24F |
IGBT MOD DUAL 1200V 400A F SER |
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CM400DU-24H |
IGBT MOD DUAL 1200V 400A U SER |
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CM400DU-24NFH |
IGBT MOD DUAL 1200V 400A NFH SER |
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