(Hong Kong)
Product Summary
Description: IGBTMODTM Modules are designed for use in switching applications. Each module consists of one IGBT Transistor with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking
Applications: Traction Medium Voltage Drive High Voltage Power Supplies
Parametrics
Applications: Traction Medium Voltage Drive High Voltage Power Supplies
Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. a 4500V (VCES), 400 Ampere Single IGBTMODTM Power Module.
Type CM Current Rating Amperes 400 VCES Volts 50) 90Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (VGE = 0V) Gate-Emitter Voltage (VCE = 0V) Collector Current (Tc = 25°C) Peak Collector Current (Pulse) Diode Forward Current** (Tc = 25°C) Diode Forward Surge Current** (Pulse) Maximum Collector Dissipation (Tc = 25°C, IGBT Part, Tj 125°C) Max. Mounting Torque M8 Terminal Screws Max. Mounting Torque M6 Mounting Screws Max. Mounting Torque M4 Auxiliary Terminal Screws Module Weight (Typical) Isolation Voltage (Charged Part to Baseplate, 60Hz 1 min.)
Features
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Diagrams
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 CM400HB-90H |
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CM400DU-12F |
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IGBT MOD DUAL 600V 400A F SER |
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CM400DU-12H |
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IGBT MOD DUAL 600V 400A U SER |
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CM400DU-12NFH |
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IGBT MOD DUAL 600V 400A NFH SER |
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CM400DU-24F |
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IGBT MOD DUAL 1200V 400A F SER |
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CM400DU-24H |
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IGBT MOD DUAL 1200V 400A U SER |
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CM400DU-24NFH |
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IGBT MOD DUAL 1200V 400A NFH SER |
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