Product Summary

FF200R12KE3 - IGBT-Module - eupec GmbH

Parametrics

Manufacturer:  Infineon   
 
Product Category:  IGBT Transistors   
 
RoHS:  No  
 
Configuration:  Dual   
 
Collector- Emitter Voltage VCEO Max:  1200 V   
 
Collector-Emitter Saturation Voltage:  1.7 V   
 
Maximum Gate Emitter Voltage:  +/- 20 V   
 
Continuous Collector Current at 25 C:  200 A   
 
Gate-Emitter Leakage Current:  400 nA   
 
Power Dissipation:  1.05 KW   
 
Maximum Operating Temperature:  + 125 C   
 
Package / Case:  IS5a ( 62 mm )-7   
 
Minimum Operating Temperature:  - 40 C  
 
Mounting Style:  Screw  
 
Factory Pack Quantity:  500 

Diagrams

 

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
FF200R12KE3
FF200R12KE3
Infineon Technologies
IGBT Transistors 1200V 200A DUAL
Data Sheet
0-6: $87.41
6-10: $78.67
FF200R12KE3_B2
FF200R12KE3_B2
Infineon Technologies
IGBT Modules N-CH 1.2KV 295A
Data Sheet
0-6: $85.58
6-10: $77.02