Product Summary
Manufacturers the Infineon product range IGBT module
IGBT Silicon Modules Configuration Dual Common Emitter Common Gate
Collector - Emitter Voltage VCEO 1200 V Collector - emitter saturation voltage 2.1 V
25 C continuous collector current of 1900 A gate - emitter leakage current of 400 nA
7.8 KW Power Dissipation Maximum Operating Temperature + 125 C
Package / Case IHM130 gate / emitter maximum voltage of + / - 20 V
Minimum Operating Temperature - 40 C Mounting Style SMD / SMT
Parametrics
FZ1200R12KL4C Infineon Technologies IGBT Modules 1200V 1200A SINGLE IGBT Modules Pricing and Availability.
Features
IGBT-Wechselrichter / IGBT-inverter
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FZ1200R12KL4C |
Infineon Technologies |
IGBT Modules 1200V 1200A SINGLE |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FZ1200R12HE4 |
Infineon Technologies |
IGBT Modules |
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FZ1200R12HP4 |
Infineon Technologies |
IGBT Modules IGBT 1200V 1200A |
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FZ1200R12KE3 |
Infineon Technologies |
IGBT Transistors 1200V 1200A SINGLE |
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FZ1200R12KF4 |
Infineon Technologies |
IGBT Modules 1200V 1200A SINGLE |
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FZ1200R12KF5 |
Infineon Technologies |
IGBT Modules IGBT 1200V 1200A |
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FZ1200R12KL4C |
Infineon Technologies |
IGBT Modules 1200V 1200A SINGLE |
Data Sheet |
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