Product Summary

Discrete => IGBTs (Insulated Gate Bipolar Transistors) => High Speed->1200V

 

Parametrics

Vces (volts) = 1200 ;; Ic (amps) = 25 ;; Vce (sat) Max = 4 ;; Ton (usec) = 0.8 ;; Toff (usec) = 1.5

Features

 

HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS

Diagrams