Product Summary

TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE

 

Parametrics

 V(cbo): 600V V(ceo): 450V V(cex): 600V V(ebo): 6V 30A 200W silicon NPN triple diffused transistor. For high power switching applications, motor control applications

Features

the collector is Isolation form Case
6 Power Transistors and 6 Free Wheeling
Diodes are Built Into 1 Package
High DC current Gain: hFE = 100(Min.)(IC = 30A)
LOW Saturation Voltage

 

Diagrams