(Hong Kong)
Product Summary
The FDS8874 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.
Parametrics
FDS8874 maximum ratings: (1)VDSS, Drain to Source Voltage: 30 V; (2)VGS, Gate to Source Voltage: ±20 V; (3)ID: Drain Current: Continuous (TA = 25℃, VGS = 10V, RθJA = 50℃/W): 16 A; Continuous (TA = 25℃, VGS = 4.5V, RθJA = 50℃/W): 15 A; (4)EAS, Single Pulse Avalanche Energy: 265 mJ; (5)PD, Power dissipation: 2.5 W; Derate above 25℃ 20 mW/℃; (6)TJ, TSTG, Operating and Storage Temperature: -55 to 150 ℃.
Features
FDS8874 features: (1)rDS(ON) = 5.5mΩ, VGS = 10V, ID = 16A; (2)rDS(ON) = 7.0mΩ, VGS = 4.5V, ID = 15A; (3)High performance trench technology for extremely low rDS(ON); (4)Low gate charge; (5)High power and current handling capability; (6)100% Rg tested; (7)RoHS Compliant.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FDS8874 |
Fairchild Semiconductor |
MOSFET 30V 16A 5.5 OHMS NCH SINGLE S |
Data Sheet |
Negotiable |
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