28F400B5

smart 5 boot block, flash memory, 44-Lead PSOP, –2.0V to +7.0V, ETOX Flash Technology

Rated 5 Rating 5 | reviews | Write a review

Price:: US $3.20~4.00 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $3.20~4.00

PartNumber:: 28F400B5

Brand:: MTI-Milliren Technologies, Inc. - MTI | Pack: SOP | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Rose's store

(Hong Kong)

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2011-09-13

From Other Seller

Part Number:28F400B5
US $3.20 - 4.00
EKXG401ELL6R8MJ16S

US $5.00 - 5.00 / Piece
(0) Remove
ECA1HHG4R7

US $10.00 - 10.00 / Piece
(0) Remove
Quantity:

piece

Product Summary

The word-wide Smart 5 boot block memory 28F400B5 provides pinout-compatible flash memories at the 2-, 4- and 8-Mbit densities. The 28F400B5 can be configured to operate either in 16-bit or 8-bit bus mode, with the data divided into individually erasable blocks.

Parametrics

28F400B5 absolute maximum ratings: (1)Commercial Operating Temperature: During Read/Erase/Program: 0℃ to +70℃; temperature Under Bias: –10℃ to +80℃; (2)Extended Operating Temperature: During Read/Erase/Program: –40℃ to +85℃; temperature Under Bias: –40℃ to +85℃; (3)Storage Temperature: –65℃ to +125℃; (4)Voltage on Any Pin (except VCC, VPP, A9 and RP#) with Respect to GND: –2.0V to +7.0V; (5)Voltage on Pin RP# or Pin A9 with Respect to GND: –2.0V to +13.5V; (6)VPP Program Voltage with Respect to GND during Block Erase and Word/Byte Program: –2.0V to +14.0V; (7) VCC Supply Voltage with Respect to GND: –2.0V to +7.0V; (8)Output Short Circuit Current: 100 mA.

Features

28F400B5 features: (1)SmartVoltage Technology: Smart 5 Flash: 5V Reads, 5V or 12V Writes; Increased Programming Throughput at 12V VPP; (2)Very High-Performance Read: 2-, 4-Mbit: 60 ns Access Time; 8-Mbit: 70 ns Access Time; (3)x8/x16-Configurable Input/Output Bus; (4)Low Power Consumption: Max 60 mA Read Current at 5V; Auto Power Savings: <1 mA Typical Standby Current; (5)Optimized Array Blocking Architecture: 16-KB Protected Boot Block; Two 8-KB Parameter Blocks; 96-KB and 128-KB MaiBlocks; Top or Bottom Boot Locations ; (6)Extended Temperature Operation: –40℃ to +85℃; (7)Industry-Standard Packaging: 44-Lead PSOP, 48-Lead TSOP; (8)Extended Block Erase Cycling: 100,000 Cycles at Commercial Temp; 10,000 Cycles at Extended Temp; (9)Hardware Data ProtectioFeature: Absolute Hardware-Protectiofor Boot Block; Write Lockout during Power Transitions; (10)Automated Word/Byte Program and Block Erase: Command User Interface; Status Registers; Erase Suspend Capability; (11)SRAM-Compatible Write Interface; (12)Reset/Deep Power-DowInput: Provides Low-Power Mode and Reset for Boot Operations; (13)Pinout Compatible 2, 4, and 8 Mbit; (14)ETOX Flash Technology: 0.6 u ETOX IV Initial Production; 0.4 u ETOX V Later Production.