(Hong Kong)
Product Summary
The IRFP260N Fifth Generation HEXFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET IRFP260N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
Parametrics
IRFP260N absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 50A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 35 A; (3)IDM, Pulsed Drain Current: 200A; (4)PD @TC = 25℃, Power Dissipation: 300 W; Linear Derating Factor: 2.0 W/℃; (5)VGS, Gate-to-Source Voltage: ±20 V; (6)EAS, Single Pulse Avalanche Energy: 560 mJ; (7)IAR, Avalanche Current: 50 A; (8)EAR, Repetitive Avalanche Energy: 30 mJ; (9)dv/dt, Peak Diode Recovery dv/dt: 10 V/ns; (10)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to +175℃; (11)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ) ℃; (12)Mounting torque, 6-32 or M3 srew: 10 lbf.in (1.1N.m).
Features
IRFP260N features: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements.
Diagrams
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 IRFP260N |
International Rectifier |
MOSFET N-CH 200V 50A TO-247AC |
Data Sheet |
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IRFP260NPBF |
International Rectifier |
MOSFET MOSFT 200V 49A 40mOhm 156nCAC |
Data Sheet |
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