IRG4PC50UDPBF

insulated gate bipolar transistor, UltraFast, Generation 4 IGBT design, TO-247AC, 600V

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Price:: US $1.20~2.40 / piece [Get Latest Price]

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	US $1.20~2.40

PartNumber:: IRG4PC50UDPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

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Products Upload time: 2012-03-26

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Product Summary

The IRG4PC50UDPBF is an insulated gate bipolar transistor with ultrafast soft recovery diode. It offers highest efficiencies. The IGBT IRG4PC50UDPBF is able to optimize for specific application conditions. It is featured with minimized recovery characteristics require less/no snubbing. The IRG4PC50UDPBF is designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBT.

Parametrics

IRG4PC50UDPBF absolute maximum ratings:(1)Collector-to-Emitter Voltage, VCES: 600V; (2)Continuous Collector Current, IC at TC = 25℃: 55A; (3)Continuous Collector Current: 27A; (4)ICM Pulsed Collector Current, IC at TC = 100℃: 220A; (5)Clamped Inductive Load Current, ILM: 220A; (6)Diode Continuous Forward Current, IF at TC = 100℃: 25A; (7)Diode Maximum Forward Current, IFM: 220A; (8)Gate-to-Emitter Voltage, VGE: ±20V; (9)Maximum Power Dissipation, PD at TC = 25℃: 200A; (10)Maximum Power Dissipation, PD at TC = 100℃: 78; (11)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +150℃; (12)Soldering Temperature, for 10 sec: 300 (0.063 in. (1.6mm) from case); (13)Mounting Torque, 6-32 or M3 Screw: 10 lbf.in (1.1 N.m).

Features

IRG4PC50UDPBF features: (1)UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode; (2)Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3; (3)IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations; (4)Industry standard TO-247AC package; (5)Lead-Free.