(Hong Kong)
Product Summary
The 2N7228 is a n-channel power mosfet.
Parametrics
2N7228 absolute maximum ratings: (1)VGS, Gate – Source Voltage: ±20V; (2)ID, Continuous Drain Current (VGS = 10V , Tcase = 25℃): 12A; (3)ID, Continuous Drain Current (VGS = 10V , Tcase = 100℃): 8A; (4)IDM, Pulsed Drain Current: 48A; (5)PD, Power Dissipation @ Tcase = 25℃: 150W; (6)Linear Derating Factor: 1.2W/℃; (7)EAS, Single Pulse Avalanche Energy: 750mJ; (8)IAR, Avalanche Current: 12A; (9)EAR, Repetitive Avalanche Energy: 15mJ; (10)dv/dt, Peak Diode Recovery: 3.5V/ns; (11)TJ , Tstg, Operating and Storage Temperature Range: –55 to 150℃; (12)TL, Lead Temperature measured 1/16” (1.6mm) from case for 10 sec.: 300℃; (13)RθJC, Thermal Resistance Junction to Case: 0.83℃/W; (14)RθCS, Thermal Resistance Case to Sink (Typical): 0.21℃/W; (15)RθJA, Thermal Resistance Junction to Ambient: 48℃/W.
Features
2N7228 features: (1)hermetically sealed isolated package; (2)avalanche energy rating; (3)simple drive requirements; (4)also available in a surface mount package; (5)ease of paralleling.
Diagrams
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 2N720A |
STMicroelectronics |
Transistors Bipolar (BJT) NPN General Purpose |
Data Sheet |
Negotiable |
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2N7218 |
Other |
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Data Sheet |
Negotiable |
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2N7219 |
Other |
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Data Sheet |
Negotiable |
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2N7224 |
Other |
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Data Sheet |
Negotiable |
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2N7227 |
Other |
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Data Sheet |
Negotiable |
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2N7274D |
Other |
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Data Sheet |
Negotiable |
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