(Hong Kong)
Product Summary
The RA07H4452M is a 7W RF MOSFET amplifier module.
Parametrics
RA07H4452M absolute maximum ratings: (1)Drain voltage: 13.2V; (2)Gate voltage: 4V; (3)Input power: 30mW; (4)Output power: 10W; (5)Operating case temperature range: -30 to 90℃; (6)Storage temperature range: -40 to 110℃.
Features
RA07H4452M features: (1)Enhancement-mode MOSFET transistors; (2)Broadband frequency range: 440 to 520MHz; (3)Low-power control current; (4)Module size: 30x10x5.4mm; (5)Linear operationg is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.
Diagrams
| Image | Part No | Mfg | Description |  |
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 RA07H4452M |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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RA07H0608M |
Other |
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Data Sheet |
Negotiable |
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RA07H3340M |
Other |
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Data Sheet |
Negotiable |
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RA07H4047M |
Other |
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Data Sheet |
Negotiable |
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RA07H4047M-E01 |
Other |
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Data Sheet |
Negotiable |
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RA07H4452M |
Other |
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Data Sheet |
Negotiable |
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RA07M0608M |
Other |
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Data Sheet |
Negotiable |
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